Abstract
In this letter, a novel hole transport layer (HTL) of poly-(Nvinylcarbazole) (PVK) doped with poly[bis(4-phenyl) (2,4,6-trimethylphenyl)amine] (PTAA) was employed in solution processed CH3NH3PbBr quantum dots light-emitting diode (QLED). By optimizing the doping ratio of the PVK and the PTAA, the hole transport ability could be effectively improved, and the hole injection barrier could also be reduced, which resulted in the performance enhancement of the device. The optimal QLED exhibits a maximum luminance of 7352 cd/m2 at 9 V, a maximum current efficiency of 11.1 cd/A, and a low turn-on voltage of 3.2 V.
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