Abstract
While the ZnO based ultraviolet (UV) photodetectors are generally restrained by the slow response and the weak photosensitivity, present work develops a facile method to fabricate flexible UV photodetectors with high device performance based on graphitic carbon nitride (g-C3N4) quantum dot/ZnO nanowire nanocomposites. The sensors are prepared by spin-coating method followed by annealing on flexible substrates, which exhibit remarkable responsivity of 355 mA W−1 under UV irradiation, a 1000% improvement over ZnO nanowire sensors (35.4 mA W−1). Both on/off ratio and photoresponse current are significantly improved by introducing g-C3N4 quantum dots compared with pure ZnO nanowire sensors. Current report provides a new choice for UV material system to efficiently improve sensor performance, and it could be easily scaled up for large scale applications.
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