Abstract
Flexible hydrogenated nanocrystalline (nc-Si:H) thin-film solar cells were prepared by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD), and the effect of highly crystalline intrinsic Si seed layers at the initial growth stage of i nc-Si:H absorbers on their structural and electrical properties and on the performance of solar cells was investigated. The crystallization of i nc-Si:H absorbers was significantly enforced by the introduction of highly crystalline seed layers, resulting in the reduction of defect-dense a-Si:H grain boundary and incubation layer thickness. The open circuit voltage of the nc-Si:H solar cells with the seed layers was improved by the decrease of charged defect density in the defect-rich amorphous region.
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