Enhanced performance of Cu2ZnSnS4 based bifacial solar cells with FTO and W/FTO back contacts through absorber air annealing and Na incorporation

Abstract

This study reports on the influence of air annealing and Na incorporation into the absorber on the performance of Cu2ZnSnS4 (CZTS) bifacial solar cells with FTO and W/FTO back contacts. Na was incorporated by depositing ∼12 nm thick NaF on the CZTS precursors prior to the sulfurization process via thermal evaporation. After sulfurization, some of the samples were annealed in air at 300 °C for 90 s and subsequently at 200 °C for 600 s. Transmission electron microscopy confirmed sulfurization of the W interlayer to form WS2 which improves the FTO ohmicity. Na incorporation improved grain size of the absorber as revealed by scanning electron microscopy. Non-annealed samples had the unwanted SnS2 phase while the air annealed samples, particularly those with both W interlayer and Na incorporation, were exempt from SnS2 phase, as was confirmed through grazing incident X-ray diffraction and Raman spectroscopy. These results suggest that absorber air annealing and Na incorporation enhance absorber crystal growth which is advantageous in reducing bulk carrier recombination. As a result, the efficiency was significantly improved from 3.0% for solar cells fabricated directly on FTO to 5.2% for those whose absorbers were air annealed, incorporated with Na and made on W/FTO. The latter also exhibits the highest external quantum efficiency response and calculated short circuit current density for both sides illumination. This indicates that the air annealing, Na incorporation and W interlayer are enhancing the performance of bifacial CZTS solar cells with FTO back contact for both back side and front side illumination.