Abstract
A new off-axis rf remote oxidation technique for the insulating barrier was carried out to enhance performance of CoFe/AlOx/CoFe magnetic tunneling junctions. The rf remote plasma method was designed to reduce self-bias voltage effect on the barrier during the rf oxidation process and to increase atomic oxygen concentration at high power operation, compared with a conventional rf plasma oxidation method. In addition, the off-axis geometry was chosen to give rise to high uniformity of the insulating layer. Experimentally observed root mean square of the barrier was decreased from 5 Å to 1.5 Å in our method. Electrical breakdown voltage and magnetoresistance of our MTJ devices increased from 0.8 V up to 1.4 V and from 20.2% up to 33.6%, respectively, correlated with the improved structural information of the barrier.
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