Enhanced performance of (112¯2) plane p-AlGaN grown with indium surfactant

Abstract

• Semi-polar ( 11 2 ¯ 2 ) plane p-Al 0.21 Ga 0.79 N films were deposited with In surfactant. • A hole concentration as high as 4.8 × 10 17 cm −3 was obtained. • The crystal quality of the p-AlGaN films could be improved with In surfactant. Indium (In) surfactant was applied during the growth process to improve the properties of the (11 2 ¯ 2) plane p-Al 0.21 Ga 0.79 N films. The characterization results demonstrated that the crystal quality of the (11 2 ¯ 2) plane p-AlGaN could be ameliorated with In surfactant. Meanwhile, the surface morphology as well as the hole concentration of the p-AlGaN films could be enhanced remarkably by optimizing the flow rate of TMIn. In particular, a maximum hole concentration of 4.8 × 10 17 cm −3 was obtained for the p-AlGaN epi-layer when the TMIn flow rate was 1.12 μ mol/min, which was increased by 3 times compared to that for the epi-layer grown without In surfactant.