Abstract
We demonstrate both theoretically and numerically that slow light can enhance the parametric process of silicon in photonic crystal line-defect waveguides. Specifically, to get the desired gain, the pump power for a given gain medium length or the gain medium length for given pump power can be reduced by (c/v g n)2 when slow light waveguides are used, where n is the material index of conventional waveguide, v g is the group velocity of the slow light waveguide and c is the light velocity in vacuum.
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