Enhanced p-Type Conductivity of ZnTe Nanoribbons by Nitrogen Doping

Abstract

Single-crystalline intrinsic and N-doped p-type ZnTe nanoribbons (NRs) were synthesized via the thermal evaporation method in argon-mixed hydrogen and nitrogen-mixed ammonia, respectively. Both intrinsic and doped ZnTe nanoribbons had zinc blende structure and uniform geometry. X-ray diffraction peaks of N-doped ZnTe nanoribbons had an obvious shift toward higher angle direction as compared with intrinsic ZnTe. X-ray photoelectron spectroscopy detection confirmed that the dopant content of nitrogen in ZnTe nanoribbons was close to 1%. Field-effect transistors based on both intrinsic and N-doped ZnTe nanoribbons were constructed. Electrical measurements demonstrated that N-doping led to a substantial enhancement in p-type conductivity of ZnTe nanoribbons with a high hole mobility of 1.2 cm−2 V−1 S−1 and a low resistivity of 0.14 Ω cm in contrast to the 6.2 × 10−3 cm−2 V−1 S−1 and 45.1 Ω cm for intrinsic nanoribbons. Moreover, the defect reaction mechanism was proposed to explain the p-type behaviors of bot...