Abstract
The present study proposes a two-step doping strategy for achieving efficient Mg doping of h-BN, involving an additional post-annealing treatment. This approach leads to ∼108-fold enhancement in conductivity of h-BN, compared with the as-doped h-BN grown by low-pressure chemical vapor deposition. The mechanism for large enhancement in h-BN doping efficiency after post-annealing was investigated, providing evidence that this treatment not only facilitates the nanoparticle decomposition and incorporation of Mg atoms into h-BN, but also restores its lattice defects. The efficient two-step doping strategy for p-type h-BN in this study enlightens its promising prospects for ultraviolet optoelectronic devices.
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