Abstract
50nm ZnO nanowires were grown on indium tin oxide (ITO) coated poly ethylene terephthalate (PET) substrates by adapting facile aqueous growth technique using low temperature and vacuum conditions. Prior to growth of ZnO nanowires, pure hexagonal wurtzite structured seed layer was grown on flexible substrates. Surface morphology of nanostructure has been examined by scanning electron microscopy (SEM). Vertical growth orientation has been evidenced in XRD patterns. Minute external mechanical force (~50nN) has produced periodic voltage peaks. 2.5nm and 7.5nm thick sputtered Pt electrode have been tested to obtain output voltages. 50nm ZnO nanowires has produced a maximum output voltage of 2.717 volts having an output power density of 397.1mW/cm2. By squeezing the diameter, we have reduced reverse leakage current through nanowires and enhanced output voltage.
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