Abstract
Large-scale two-dimensional air-gap photonic crystals (PhCs) were embedded in an n-type GaN layer to enhance the light emission of GaN-based light-emitting diodes (LEDs). The embedded-PhCs were obtained through overgrowth on n-GaN templates, which had air holes array previously fabricated by using nanosphere lithography technology. The effects of the distance D from active region to PhCs on the light extraction efficiency (LEE) of LEDs are investigated by experiments and finite difference-time domain simulation. The PhC LEDs with D = 2370 nm showed an improved light output power by 80.8% on average at forward current of 350 mA without degradation of electrical performance compared to conventional LEDs. It is mainly attributed to the improved LEE by enhancing the interaction of the guided modes and the embedded air-gap PhCs.
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