Abstract
<para xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> We demonstrate high-performance InGaN-based light-emitting diodes (LEDs) with tunneling-junction-induced 2-D electron gas (2DEG) at an AlGaN/GaN heterostructure, which is inserted in the middle of the <formula formulatype="inline"><tex Notation="TeX">$\hbox{P}^{+}$</tex></formula>-GaN contact layer of a conventional LED structure. The output power of a LED with a 2DEG insertion layer shows 17% enhancement compared to that of a conventional LED at 20 mA. This enhancement in output power for the LED with a 2DEG insertion layer could be attributed to both enhanced hole-injection efficiency and lateral current spreading by the presence of 2DEG at the AlGaN/GaN heterostructure. </para>
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