Abstract
High brightness GaN-based light-emitting diodes(LEDs) with stripe-contact electrodes have been developed. The p-type Ohmic contact layer is composed of oxidized Ni∕Au stripes and NiO stripes. A Ag (3000Å) omnidirectional reflector covers the p-type contact. The n-type contact is a Ti∕Al planar film with a Ti∕Al stripe. All Ni∕Au, NiO, and Ti∕Al stripes surround the center of the LED mesa. At 20mA current operation, the light output power of GaN-based LEDs with the stripe-contact electrodes is 16.26%–35.37% higher than that of the conventional LEDs.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
