Abstract
High brightness GaN-based light-emitting diodes(LEDs) with stripe-contact electrodes have been developed. The p-type Ohmic contact layer is composed of oxidized Ni∕Au stripes and NiO stripes. A Ag (3000Å) omnidirectional reflector covers the p-type contact. The n-type contact is a Ti∕Al planar film with a Ti∕Al stripe. All Ni∕Au, NiO, and Ti∕Al stripes surround the center of the LED mesa. At 20mA current operation, the light output power of GaN-based LEDs with the stripe-contact electrodes is 16.26%–35.37% higher than that of the conventional LEDs.
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