Enhanced optoelectronic properties of UV-C light-emitting diode

Abstract

We numerically analyzed proposed structure named as LED S2 in comparison to reference structure LED S1. In LED S2 we introduced undoped AlGaN and p-AlGaN layers between the electron blocking layer (EBL) and the p-GaN (hole injecting layer). The simulation finding shows proposed structure (LED S2) provide a better strategy for lowering electron overflow and improving hole strength. This enhancement in the properties is the result of maximum recombination of carriers (electron/hole) in the active region. Furthermore, the mismatch between the epi-layers on the p-side reduces, allowing holes to easily move towards the active region.