Enhanced optical and structural properties of V-doped binary SnS2 buffer layer

Abstract

Recently tin disulfide (SnS2) has attracted considerable attention due to its n-type semiconductor property with a tunable bandgap similar to CdS and In2S3, Tin disulfide (SnS2) and doped vanadium (V) powder were successfully prepared by a simple hydrothermal method. The crystallographic, morphological, elemental conformation and optical properties were characterized by X-ray diffraction (XRD), Scanning electron microscopy (SEM), energy dispersion microscopy (EDS), Atomic force microscopy (AFM), UV–Vis spectroscopy and electrochemical analysis, respectively. The XRD analysis revealed the polycrystalline nature of the films. Raman spectroscopy indicated a prominent peak at ~315 cm−1 along with two small peaks after the incorporation of V contents. The AFM analysis showed the big grain and the rough surface of the films. The optical absorption indicates a remarkable shift to the lower wavelength and optical bandgap was found to vary from 2.42 to 2.02 eV with V-doped contents. The photocurrents response of the V-doped SnS2 films was conducted by three-electrode configuration which demonstrating good photoresponse, three times higher than pure SnS2 photoanode. The results reveal that the V- doping with SnS2 is a very promising compound for effectively photovoltaic application.