Abstract
Low open-circuit photovoltage and poor hole transfer character of semiconductors have limited the development of p-type dye-sensitized solar cells (p-DSSCs) owing to the minor energy-gap between the conduction band of NiO and the Nernstian potential of the I3−/I− electrolyte, as well as the low intrinsic hole-conductivity of NiO semiconductor. Hereby, a novel NiO/CuO nanocomposite was well-designed and successfully fabricated as photocathode material of p-DSSCs. Combined with Co2+/Co3+ electrolyte, the devices showed noticeable enhancement of both open-circuit photovoltage and short-circuit photocurrent. Compared to NiO, a deeper valence-band of NiO/CuO resulted in a 140 mV improvement of photovoltage of p-DSSCs. Electrochemical impedance spectroscopy indiates an improved hole transport of NiO/CuO nanocomposite due to modified effect by CuO. Charge recombinations are also suppressed to achieve increased charge collection efficiencies and improved photoelectrochemical performance.
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