Abstract
We propose designs of silicon nitride (Si3N4) waveguides with enhanced nonlinear parameter and engineered anomalous group velocity dispersion (GVD) by addition of tellurium oxide (TeO2) top-coating layers of various thicknesses. The proposed waveguides have calculated nonlinear parameters of up to three times that of stoichiometric Si3N4 and exhibit anomalous GVD at near infrared wavelengths. The GVD of such waveguides can be tuned between the normal and anomalous regime with different zero dispersion wavelengths by adjusting the thickness of TeO2 coating. These designs offer promise of higher performance nonlinear devices on a standard low-loss Si3N4 platform with the possibility of integration of active functionalities owing to higher solubility of rare earth dopants in tellurium oxide.
Highlights
Over the last several years nonlinear optical devices have shown great progress and promise for a wide range of applications in integrated photonics, including in areas such as all optical signal processing, ultra-low power all optical switching and quantum photonics [1]
Challenges related to the complexity of fabrication of Si3N4 waveguides based on the requirement for thicker Si3N4 layers for nonlinear optical devices persist
In this work we have presented numerical results that compliment stoichiometric Si3N4 by offering improvement in nonlinear parameter and a simple way of tailoring group velocity dispersion (GVD) in thinner Si3N4 strip waveguides by addition of a TeO2 top coating layer
Summary
Over the last several years nonlinear optical devices have shown great progress and promise for a wide range of applications in integrated photonics, including in areas such as all optical signal processing, ultra-low power all optical switching and quantum photonics [1]. Stoichiometric Si3N4 has proven to be an excellent candidate for on chip nonlinear photonics, its nonlinear refractive index is lower compared to other materials of interest such as silicon-on-insulator (SOI) or silicon-rich silicon nitrides [5]. TeO2 has slightly higher linear refractive index (n) than that of Si3N4 enabling fabrication of highly compact waveguides. It has significantly higher nonlinear refractive index (n2) and higher Raman gain coefficient than that of stoichiometric Si3N4 [19]. Our numerical results show that by varying the thickness of the TeO2 coating we can tune the GVD parameter of Si3N4 strip waveguides (with as low as 300 nm thickness) between the normal and anomalous regime and achieve anomalous dispersion that may cover up to a 0.8 μm wavelengths span. We calculate a nonlinear parameter in TeO2-coated Si3N4 waveguides that is up to three times higher than that of typical stoichiometric Si3N4 waveguides
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