Abstract
We compare the dynamic properties of bulk, lattice-matched, and strained multiple quantum well (MQW) 1.3 μm Fabry–Perot lasers up to high-bias levels. We show for the first time that long wavelength strained MQW lasers can have a higher intrinsic bandwidth than bulk active and lattice-matched MQW lasers, and that a −3 dB bandwidth of over 30 GHz can be expected from devices with a thin separate confinement heterostructure if a low parasitic device structure is used. The K factor used to determine maximum bandwidth in bulk active laser diodes is shown to be unsuitable for strained MQW devices, where a linear relationship of damping/(resonance frequency)2 is not observed at high power levels.
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