Abstract
Measurements of the threshold current, slope efficiency and optical modulation characteristics of self-assembled InGaAs-GaAs quantum-dot lasers have been made in the temperature range of 20-200 K in order to understand the carrier dynamics in these devices. The dc characteristics of these devices showed a region of almost temperature independent threshold current up to 85 K (T/sub 0/=670 K) with a maximum slope efficiency at 150 K. The maximum measured bandwidth increased from 5 GHz at room temperature to 20 GHz at 80 K. This is consistent with the bandwidth being limited by carrier relaxation time through electron-hole scattering.
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