Enhanced memristive effect of laser-reduced graphene and ferroelectric MXene-based flexible trilayer memristors

Abstract

Ferroelectric memory devices based on 2D materials are gaining popularity in research due to having non-volatile data storage, low power consumption and improved endurance and data retention properties. In this study, we discussed the synthesis of self-standing graphene oxide (GO) and MXene films via chemical oxidation and etching routes. As synthesized MXene (nFE-MXene) was converted into ferroelectric (FE-MXene) by heating the nFE-MXene self-standing film. XRD, SEM, EDS and elemental mapping supported crystal structure as well as chemistry of prepared material. Ferroelectric hysteresis measurements at various frequencies (100Hz–400Hz) confirmed the presence of polarization domains in FE-MXene. Graphene oxide was laser reduced (rGO) to implement as metal electrodes for metal-insulator metal (MIM) memory device architecture. Three trilayer memory systems (rGO/nFE-MXene/rGO, rGO/FE-MXene/rGO and rGO/FE-MXene/nFE-MXene/rGO) were fabricated showing non-volatile bipolar switching. The memory performances were checked for a working window of ±4V. Further, the elevated memory performance of rGO/FE-MXene/nFE-MXene/rGO memristive device at low operating voltage (˂ ±3V) is discussed for efficient working device application with an on/off ratio of 103, higher data retention (4000 s) and endurance up to 1000 cycles.