Abstract
We report on the memory characteristics of organic ferroelectric field-effect transistors (FeFETs) using spin-coated poly(vinylidene difluoride/trifluoroethylene) (P(VDF/TrFE)) as a gate insulating layer. By thermal annealing the P(VDF/TrFE) layer at temperatures above its melting point, we could significantly improve the on/off current ratio to over 104. Considerable changes in the surface morphology and x-ray diffraction patterns were also observed in the P(VDF/TrFE) layer as a result of the annealing process. The enhanced memory effect is attributed to large polarization effects caused by rearranged ferroelectric polymer chains and improved crystallinity in the organic semiconductor layer of the FeFET devices.
Highlights
Solution-processed organic field-effect transistors (OFETs) can potentially be applied to flexible displays[1] and wearable sensors for health-care applications.[2]
We report on the memory characteristics of organic ferroelectric field-effect transistors (FeFETs) using spin-coated poly(vinylidene difluoride/trifluoroethylene) (P(VDF/TrFE)) as a gate insulating layer
There have been reports devoted to several types of organic memory devices, dynamic random access memory (DRAM),[5] static random access memory (SRAM),[6] flash memory,[7] and ferroelectric devices such as ferroelectric capacitors and ferroelectric field-effect transistors (FeFETs).[8]
Summary
Diffraction (XRD) measurements to assess their crystallinity and to analyze their crystal structure. An atomic force microscope (AFM) was used to observe the surface morphology of the layers. We fabricated organic FeFET devices with different annealing temperatures. The memory characteristics were measured and compared against the properties of the P(VDF/TrFE) layers
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