Abstract

The present study investigates the mechanical properties of hybrid photoresists in the context of their pattern-collapse behaviors. The mechanical properties such as the DMT (Derjaguin, Muller, Toropov) modulus and tip-sample adhesion forces of the high-resolution patterns obtained from two hybrid EUV photo-resists, 1.5% & 2.15%-MAPDSA-MAPDST bearing hexafluoroantimonate and triflate counter ion moieties have been investigated using peak force quantitative nano-mechanical mapping (PF-QNM) technique. The mechanical properties of the well resolved high-resolution 90–20 nm (L/5S) line patterns, 20–32 nm (L/2S-L/5S) lines patterns and nano-features such as line-elbow connections have been investigated and analyzed against the differences in their SbF6− composition. For the 1.5%- MAPDSA-MAPDST resist case the DMT modulus and tip-sample adhesion forces are found strong dependence on the resist line width and line spacing, as compared to 2.15%- MAPDSA-MAPDST resist. There is a significant improvement in the modulus value of 5 GPa for 2.15%-MAPDSA-MAPDST resist in contrary to the ~2.7 GPa for the 1.5%-MAPDSA-MAPDST resist for the 20 nm (L/2S) Line patterns. Similarly, the tip sample adhesion forces on resist surface are also found dependent on patterns aspect ratio as well as on SbF6− content in the resist composition. These studies revealed that an increase of the SbF6− content in the resist formulation, imparts cascading effects to the mechanical properties of their high-resolution nanopatterns, which in turns helps to reduce the pattern collapse resulting in superior patterning performances.

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