Abstract
Magnetic and magnetotransport properties of polycrystalline La1-xSrxMnO3 (LSMO) thin films annealed at high temperatures were investigated. The reaction of the LSMO thin films with YSZ substrates effectively induces enhancement of low-field MR up to 13.8 % at 78 K for the film annealed at 1350°C. The results are consistently explained by the formation of potential barriers at grain boundaries by the annealing.
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