Enhanced Magnetoresistance in In-Plane Monolayer MoS2 with CrO2 Electrodes

Abstract

Magnetoresistance of monolayer MoS2 is reported to increase when used in in-plane configuration with CrO2 half-metal ferromagnet (HMF) electrodes. Density functional theory (DFT)- and non-equilibrium Green’s function (NEGF)-based simulations show that high magnetoresistance (MR) values of ∼860% can be achieved in in-plane monolayer MoS2 with CrO2 electrodes, which is much higher than the MR value of ∼300% for nine-layer and the MR value of ∼70% for single-layer out-of-plane MoS2 reported in Dolui et al., Phys. Rev. B 90(R), 041401 (2014) past by other researchers. High spin-injection efficiency ∼100% is also obtained at high bias voltages. High MR and perfect spin filtration suggests the importance of this configuration in spintronics applications.