Abstract
In this work, room temperature magnetoelectric (ME) properties of 0.50Pb(Ni1/3Nb2/3)O3–0.35PbTiO3–0.15PbZrO3 (PNNZT)/NiFe2O4 (NFO) 2-2 bilayer thin films grown on Pt/Ti/SiO2/Si substrate, using pulsed laser deposition technique, are reported. Structural studies confirm single phase PNNZT/NFO 2-2 bilayer structure formation. PNNZT/NFO 2-2 bilayer thin film shows a maximum ME voltage coefficient (αE) of ~0.70 V cm−1. Oe–1 at a frequency of 1 kHz. The present study reveals that PNNZT/NFO bilayer thin film can be a potential candidate for technological applications.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
