Abstract
Combining various (multi-)ferroic materials into heterostructures is a promising route to enhance their inherent properties, such as the magnetoelectric coupling in BiFeO3 thin films. We have previously reported on the up-to-tenfold increase of the magnetoelectric voltage coefficient in BaTiO3-BiFeO3 multilayers relative to BiFeO3 single layers. Unraveling the origin and mechanism of this enhanced effect is a prerequisite to designing new materials for the application of magnetoelectric devices. By careful variations in the multilayer design we now present an evaluation of the influences of the BaTiO3-BiFeO3 thickness ratio, oxygen pressure during deposition, and double layer thickness. Our findings suggest an interface driven effect at the core of the magnetoelectric coupling effect in our multilayers superimposed on the inherent magnetoelectric coupling of BiFeO3 thin films, which leads to a giant coefficient of 480 Oe for a (BaTiO3-BiFeO3) superlattice with a nm double layer periodicity.
Highlights
The control of magnetism by electric fields and vice versa, the control of ferroelectric polarization by magnetic fields, in magnetoelectric (ME) multiferroics promises great advantages in realizing a number of novel applications
X-ray Diffraction Measurements In X-ray 2θ-ω scans we could confirm the high quality of the produced multilayers
The temperature dependencies for the remaining samples can be found in in Figure 7 we present an overview of the αME values for all BaTiO3 -BiFeO3 (BTO-BFO) multilayer samples from our previous publications and this work, as well as some additional samples (BFO thickness variation, as listed in Table S1) in relation to their respective double layer thickness
Summary
The control of magnetism by electric fields and vice versa, the control of ferroelectric polarization by magnetic fields, in magnetoelectric (ME) multiferroics promises great advantages in realizing a number of novel applications. Since their discovery, they have been successfully implemented in the field of spintronics [1]. En route towards stable ME memory devices and other low-frequency out-of-resonance applications, other means have to be explored to enhance the typically weak coupling effect. Apart from generating new artificial multiferroic heterostructures from purely ferroelectric and ferromagnetic constituent compounds, composites can be used to enhance the properties of an intrinsic multiferroic. In 2014 we first reported on the enhanced ME coupling in thin film
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