Abstract

We report the effect of compressive strain on magnetic and magneto-electrical properties of lightly doped manganite La 0.88Sr 0.12MnO 3 thin films. Films, having 5–60 nm thickness, were grown on (001) LaAlO 3 and (001) SrTiO 3 substrate by DC-magnetron sputtering. These films show a magnetoresistance as high as ∼65% at room temperature and insulator–metal transition temperature ( T IM ) ∼ 320 K . Further, we demonstrate that a small variation in strain causes significant changes in their properties. We have discussed the possible origin of these features and compared with the reported literature.

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