Abstract
The magnetic property of GaMnAs can be enhanced by increasing the Mn concentration as well as hole concentration. The interstitial Mn is inevitably formed when Mn concentration is very high even if the growth condition is carefully controlled. They act as a double donor and compensates for Mn acceptors in GaAs. The interstitial Mn atoms also tend to be bound by those occupying the substitutional Ga site. The combination of interstitial and substitial Mn atom produces antiferromagnetic pairs. In order to reduce the interstitial Mn and increase hole concentration, we introduce Mn delta-doped layers separated by undoped GaAs layers. The magnetic properties are investigated as a function the spacing between Mn delta-doped layers. It is found that magnetization characteristics such as the magnetic susceptibility, coercive force and Curie temperature are enhanced when the spacing between Mn delta-doped layers is optimized.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
