Abstract
The amorphous N-doped FeGa film were successfully deposited on Si (001) substrate using N2-plasma assisted pulsed laser deposition system at different temperatures. The enlarged saturation magnetization of FeGaN film has been investigated, which is higher than pure FeGa film under the same preparation condition. The optimal saturation magnetization of FeGaN film can reach up to 300 emu/cc, which also can be tuned by controlling the N2 flux during the deposition process. With the increase of deposition temperature, the antiferromagnetic, ferromagnetic and paramagnetic characters have also appeared respectively. The reason can be attributed to the change of the short-range order of lattice structure of FeGaN.
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