Abstract
ABSTRACTResults of a study of the luminescence of rare earth ions in crystalline thin films grown on reflective substrates will be presented. As an example, the luminescence of Sm2+:CaF2 films has been calculated as a function of the separation between the active layer and a silicon substrate. These calculations involve coupling the narrow resonance of the rare earth ions to the electromagnetic modes of the film. Results including the optimum thickness for enhanced luminescence will be presented. Experimental work on Sm2+:CaF2 films grown on Si by molecular beam epitaxy will also be discussed.
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