Abstract
We have studied photoluminescence (PL) from the condensed phase in silicon-on-insulator samples with different Si layer thickness from 50 to 340 nm. Two major PL bands are observed at low temperatures, originating from free excitons (FE) and electron–hole droplets (EHD). It is found that with an increase of the excitation intensity the EHD PL shows a linear increase in the 50-nm-thick layer while a superlinear increase in the 340-nm-thick layer. The intensity ratio of the EHD PL to the FE PL in the 50-nm-thick layer is much larger than that in the 340-nm-thick layer under the same experimental conditions. The luminescence from the EHD is enhanced in thin Si nanolayers. These results suggest that highly dense electrons and holes are formed in the Si nanolayer and the interfaces act as the nucleation center of the EHD.
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