Abstract

The light output of dipole source in three types of light‐emitting diodes (LEDs), including the conventional planar LED, the nanorod LED, and the localized surface plasmon (LSP) assisted LED by inserting silver nanoparticles in the gaps between nanorods, was studied by use of two‐dimensional finite difference time domain method. The height of nanorod and the size of silver nanoparticles were variables for discussion. Simulation results show that a large height of nanorod induces strong wavelength selectivity, which can be significantly enhanced by LSP. On condition that the height of nanorod is 400 nm, the diameter of silver nanoparticle is 100 nm, and the wavelength is 402.7 nm, the light‐output efficiency for LSP assisted LED is enhanced by 190% or 541% as compared to the nanorod counterpart or the planar counterpart, respectively. The space distribution of Poynting vector was present to demonstrate the significant enhancement of light output at the resonant wavelength of LSP.

Highlights

  • High-efficiency GaN-based light-emitting diode (LED) has tremendous potential for general lighting

  • LEDs are higher than that for planar counterparts, which imply that the short nanorod does not induce strong resonance oscillation at specific wavelength and mainly provides scattering centers

  • In specific domain of longer wavelength range, the η is reduced as compared to the planar LED

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Summary

Introduction

High-efficiency GaN-based light-emitting diode (LED) has tremendous potential for general lighting. The active layer is composed of nanoscale rod array in nanorod LEDs instead of planar thin-film in conventional counterparts. A straightforward fabrication method for nanorod LEDs is to etch the planar epilayers with nanoscale patterned mask [2,3,4,5,6,7,8,9,10]. In these published literatures, most researchers focused on the strain relaxation processes, and few studies were involved in light-output enhancement. As for the light extraction efficiency, after the alumina powders were spin-coated on the p-GaN layer as mask for etching of nanorod array, the residual alumina particles on the top of nanorods benefit the light extraction efficiency [10]

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