Abstract
Surface texturing methods are often used in thin-film solar cells (SCs) to achieve effective photon trapping. However, such approaches have a detrimental impact on cell performance and are not suitable for thin-films. Plasmonic light trapping using metal nanoparticles (NPs) is one of the promising technique for achieving superior optical absorption in thin-film SCs with less material usage. In this article, to improve the optical performance of GaAs thin-film SCs, a uniformly distributed Gold (Au) nanoparticle (NP) array is introduced at the top of transparent indium-tin-oxide (ITO) electrode. The Au NP array functions as an antireflection layer, increasing light harvesting in active layer for both visible and infrared (IR) wavelength regions. By performing 3-D finite-different time-domain (FDTD) analysis, we have presented a comparative optoelectronic study of the GaAs SCs with and without Au NPs. Photovoltaic parameters such as optical absorption (A (λ)), photogeneration density (Goptical rate), and photocurrent density (Jsc) are used to evaluate performance of the structures. The proposed thin-film SCs with Au NPs achieved an optical absorption of 60% (planar) and 77% (NW array) with a remarkable photocurrent of 22.8 mA/cm2 (planar) and 26.7 mA/cm2 respectively.
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