Abstract
We report on the enhanced light extraction of GaN-based light emitting diodes (LEDs) fabricated with deeply etched mesa holes. To maximize the extraction of trapped light, the geometry of mesa holes, which act as lateral exits in guided mode, could be optimized based on Snell's law. The LED fabricated with deeply etched mesa holes showed 27% enhancement in output power when compared to a reference LED. This result agreed with optical ray-tracing calculations.
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