Abstract
The cone-shaped-sidewall InGaN-based light-emitting diodes (LEDs) with higher light extraction efficiency were fabricated through the photoelectrochemical (PEC) process. The process procedures were consisted with the PEC selective wet oxidation on n-type GaN without p-type GaN layer, removing Ga2O3 layer, crystallographic wet etching process, and forming cone-shaped sidewall structure. The stable crystallographic etching planes were formed as the p-type GaN { } planes and n-type GaN { } planes with a 27{degree sign} included angle. The InGaN/GaN multi-quantum-well (MQW) layers were located at the cone's tip nano-structure in mesa-edge region, and the micro-photoluminescence spectrums had the blue shift phenomenon from 457.8nm to 450.8nm caused by the quantum confinement effect and particle compress strain released.
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