Abstract
The MgZnO/ZnO/MgZnO double heterostructure was deposited at low temperature by a vapor cooling condensation system to enhance the light emission of the ultraviolet p-AlGaN/i-MgZnO/i-ZnO/i-MgZnO/n-ZnO:In light-emitting diodes (ULEDs). The defect and vacancy concentrations of the deposited films were effectively reduced. The peak intensity and total emission power of the ultraviolet electroluminescence (EL) spectra of the ULEDs were 3.08 times and 1.82 times higher than those of the p-AlGaN/i-ZnO/n-ZnO:In ULEDs, respectively. Furthermore, the visible EL emission intensity induced by defect and vacancy in the ULEDs was negligible due to the high performances of the deposited active i-ZnO films.
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