Abstract
We have observed enhanced direct-gap light emission from undoped and n-doped germanium microdisks on silicon. The enhancement is attributed mainly to increased carrier density due to surface passivation of the dry-etched sidewall. The enhancement factor increases as the disk size decreases, approaching 4 for microdisks with radii of 1 µm. To achieve maximum enhancement and not modify the geometric structure of resonators, 450–500 °C is found to be the best temperature window. Thermal oxidation is also effective for the degraded interface induced by sputtered Al2O3. These results indicate that thermal oxidation is a promising method suitable for fabrication of low-threshold germanium lasers.
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