Enhanced Light Absorption and Minority Carrier Lifetime for Pn<sup>+</sup> Multicrystalline Silicon by Treatment with HF/H<sub>2</sub>O<sub>2</sub>-Based Solutions

Abstract

A novel method was proposed to form porous silicon (PS) antireflection layers and thin SiO2 films at the same time by HF/H2O2 treatment of acid-textured pn+ multicrystalline silicon. Porous silicon structures formed inside the cavities and the porosity became large with an increase of the treated time resulting in a dramatical decrease of reflectance. The reflectance decreased to less than 5% within the wavelength range of 420-970 nm after 5 min HF/H2O2 treatment. Furthermore, the minority-carrier lifetime showed an increase of about 42% for a short treated time because of the formation of a thin silicon oxide layer resulting the reduction of dangling silicon bonds in the interface between PS/Si.