Abstract
Lateral photovoltaic effect has been studied in p-La0.67Ca0.33MnO3/n-Si heterojunction. Under illumination of continuous 808 nm laser beam on the film surface, a transient photovoltaic overshoot accompanied with the steady signal was observed when the laser turned off and on. The open-circuit photovoltage had a linear dependence on illuminated position, and the sensitivity reached 0.75 mV mW(-1) mm(-1) for steady value and 6.25 mV mW(-1) mm(-1) for the transient peak value. Especially, an enhancement in position detecting sensitivity was observed when the interface of this heterojunction was irradiated, which were 1.25 mV mW(-1) mm(-1) (steady value) and 26.0 mV mW(-1) mm(-1) (peak value). This work demonstrates a novel way to increase sensitivity for manganite-based position sensitive detectors.
Highlights
Lateral photovoltaic effect (LPVE) was first discovered by Schottky in 1930 and proposed as position sensitive detectors (PSDs) sixty years ago [1,2]
Since PSDs have a wide range of applications in the field requiring precision measurements, such as robotic vision, remote optical alignment, machine tool alignment and medical instrumentation, etc, many studies have been carried out to improve the sensitivity and linearity of PSDs in various kinds of systems, from conventional p-n junctions to hydrogenated amorphous silicon based structures [3], porous silicon [4], Ti/Si amorphous supperlattices [5], semiconducting polymer [6], metal-semiconductor (MS) and metal-insulator-semiconductor (MIS) structures [7,8,9], modulation-doped AlGaAs/GaAs heterostructure [10], Cu2O nanoscale film [11], etc
The fabrication processes for the PSDs mentioned above are complex and high cost
Summary
Lateral photovoltaic effect (LPVE) was first discovered by Schottky in 1930 and proposed as position sensitive detectors (PSDs) sixty years ago [1,2]. Perovskite-type manganite thin films were discovered to have photoresponse above their forbidden gap. By coating such a film on a chosen substrate to form a heterostructure, one obtains an ultrafast photodetector [12,13]. This kind of material with good chemical stability is insensitive to harsh physical environment such as fluctuations of temperature and pressure, and can meet the needs of oil and gas optical engineering. Under illumination of continuous 808 nm laser beam, a transient photovoltaic overshoot accompanied with the steady signal was observed when the laser turned off and on, and an enhancement in position sensitive detection was observed when the junction interface was irradiated
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