Abstract
The effect of surface plasmon--LO-phonon excitations of the doped elements of heterostructures in the electronic dynamics of quantum dots has been theoretically studied in a double heterostructure. It has been found that, in contrast to a single heterostructure, critical points can arise in the surface plasmon--LO-phonon density of states for layered structures. This results in enhanced quantum-dot intraband carrier relaxation as compared with the single heterostructure. It has been shown that the relaxation rates and spectral positions of relaxation windows strongly depend on the thickness of the layer containing the quantum dots. These effects of the critical points of density of states have been demonstrated using a model n-$\mathrm{Ga}\mathrm{As}∕\mathrm{Ga}\mathrm{As}∕\text{air}$ heterostructure with an InAs quantum dot embedded in the GaAs layer.
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