Abstract
AbstractExcitation‐power‐dependent photoluminescence (PL) measurements have been carried out on a single InGaN quantum well structure with a different thickness of silver on its surface. This allows for investigation of surface plasmon (SP) coupling enhanced internal quantum efficiency as a function of the silver thickness. A maximal enhancement with a factor of up to 25 times in PL intensity has been observed on the sample with a silver film of 100 nm, compared with the as‐grown sample. A blue shift in peak energy has been observed as a function of silver thickness. Atomic force microscopy has been employed to examine the change in morphology of the silver films with different thickness. Finally an estimation of the internal quantum efficiency is made, showing ∼10.8 times enhancement on the sample with the 100 nm silver, compared to the as‐grown sample. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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