Abstract
The interband-resonant light modulation by the intersubband-resonant light in selectively n-doped quantum wells is investigated. The modulation efficiency depends greatly on the degree of nonlinear optical coupling between the interband and intersubband-resonant lights. It is shown theoretically and experimentally that the selective n-doping in the barrier layers of the quantum wells is very effective to increase the nonlinear coupling degree and thus the modulation efficiency. The thermal and the hot carrier effects on the modulation are also discussed. >
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