Abstract
Plasma damaged NMOS devices, fabricated on bulk and SOI wafers, were subjected to X-ray total dose irradiation. Prior to total dose irradiation, the differences in threshold voltage and subthreshold slope between the control and plasma damaged devices were very small. However, after total dose irradiation to 1 Mrad (SiO/sub 2/), it became obvious that the plasma damaged devices have a significantly higher density of both oxide-trap charge and interface-trap charge. This result is different from the traditional hot-carrier or Fowler-Nordheim (F-N) stress of plasma damaged devices, where enhanced hole trapping is less pronounced.
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