Abstract
Formation of cobalt silicides in the Co/Au/Co trilayer films on (0 0 1)Si substrate after different heat treatments has been investigated. The nucleation temperature of low-resistivity CoSi 2 phase in the Co/Au/Co/(0 0 1)Si samples was found to be lowered by about 190 °C compared to what is usually needed for the growth of CoSi 2. The results can be explained using the classical nucleation theory. From energy dispersive X-ray (EDAX) analysis, the Au atoms were found to diffuse from their original position to disperse in CoSi 2 layer and in the grain boundaries of CoSi 2 during silicidation reactions. In addition, compared with the Co/Au/(0 0 1)Si sample, the surface and interfacial roughness of CoSi 2 film was effectively improved by using the Co/Au/Co sandwich structure on (0 0 1)Si.
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