Abstract
Preferentially (002) oriented ZnO films were prepared on Si (111) substrates at relatively low temperature by trifluoroacetate metalorganic deposition (TFA-MOD) method. The growth process, structure and photoluminescence properties were studied by thermogravimetric analysis, Fourier transform infrared absorption, X-ray diffraction, X-ray photoelectron spectra and photoluminescence. The green photoluminescence is enhanced remarkably and becomes visible by naked eyes with the formation of zinc silicate after 900 °C annealing. Furthermore, the oxygen partial pressure of annealing ambient also affects the green photoluminescence evidently. Our results support that oxygen antisite defect in ZnO is responsible for the green emission and a small amount of Zn2SiO4 can enhance the green emission.
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