Abstract

Integrated silicon plasmonic circuitry is becoming integral for communications and data processing. One key challenge in implementing such optical networks is the realization of optical sources on silicon platforms, due to silicon's indirect bandgap. Here, we present a silicon-based metal-encapsulated nanoplasmonic waveguide geometry that can mitigate this issue and efficiently generate light via third-harmonic generation (THG). Our waveguides are ideal for such applications, having strong power confinement and field enhancement, and an effective use of the nonlinear core area. This unique device was fabricated, and experimental results show efficient THG conversion efficiencies of η = 4.9 × 10-4, within a core footprint of only 0.24 μm2. Notably, this is the highest absolute silicon-based THG conversion efficiency presented to date. Furthermore, the nonlinear emission is not constrained by phase matching. These waveguides are envisioned to have crucial applications in signal generation within integrated nanoplasmonic circuits.

Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.