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Abstract
Gd-doping YBCO films were fabricated on LaAlO3 (00l) substrates by sol–gel method using benzoic acid modified trifluoroacetates precursor solution. Effects of Gd doping on texture, microstructure and flux pinning properties of YBCO films were investigated. With optimal Gd-doping, the surface and texture of YGdxBa2Cu3Oy films have been improved. The introduction of ion defects can improve the critical current density (Jc) and flux pinning force (Fp) of the YGdBCO films. The Jc and Fp values of YGd0.1Ba2Cu3Oy film are almost two times higher than that of pure YBCO film in magnetic field. These results indicate that Gd-doping YBCO phase with sol–gel process is a perspective method for enhancement of current carrying capability of YBCO film.
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