Abstract

Enhanced field ionization of excited atoms was observed in a solid-state microcavity (${\mathrm{C}\mathrm{a}\mathrm{S}:\mathrm{E}\mathrm{u}}^{2+}$ thin-film electroluminescent devices) by inhibiting their spontaneous emission. By increasing the lifetime of the excited ${\mathrm{Eu}}^{2+}$ atoms using the microcavity effect, the field-ionization rate was enhanced approximately three times over that without the microcavity. The characteristic temperature dependence of the enhanced field-ionization rate suggested the generation process was dissipative quantum tunneling induced by strong electron-phonon coupling between localized electrons in the excited ${\mathrm{Eu}}^{2+}$ atoms and the surrounding lattice vibrations of the CaS host in the solid-state microcavity.

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