Abstract
Modified volcano-shaped field emission arrays (MVSFEAs) have been fabricated by using one photolithography mask process and selfaligned technology. Owing to the enhanced electric field at the tips causing a larger value of field enhancement factor β, consequently, the onset voltage is lower and the emission current is higher for MVSFEAs. The emission current density at gate voltage of 380 V is 8.64 × 10 6 A cm −2 and emits about 58 nA per tip for volcano aperture radius of emitter, a, equal to 0.75 μm. The emission current density of MVSFEAs for a = 0.75 μm is 37.9 times larger than that of a = 0 μm (cone-shaped emitter) owing to the larger value of β for MVSFEAs.
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