Abstract
The hybrid structure of ZnO NWs with the presence of different dopants recently has drawn many interests from researchers due to the possibility to integrate multiple functionalities into one single structure. In this article, we investigated the morphology, crystal structure and ferromagnetism of the ZnO@Co/Ni hybrid core@shell NWs prepared by a facile electrochemical deposition method. The results show that a thin layer of Ni and Co coated on the surface of ZnO NWs (confirmed by XRD, EDS, TEM and Raman scattering) can create a significant improvement of ferromagnetic property in such hybrid core@shell NWs. In which, for the coating time of 10, 15, 20 min, the value of Ms is around 0.67, 0.88 and 2.56 emu g−1 for ZnO@Co NWs, and about 0.013, 0.022 and 0.031 emu g−1 for ZnO@Ni NWs, respectively, in comparison with the number of 0.016 emu g−1 for pure ZnO NWs. Interestingly, we also found the temperature dependence of ferromagnetism of such Co/Ni coated ZnO NWs. These results reveal the possibility to employ such hybrid core@shell NWs for many applications, e.g. spin field effect transistors.
Highlights
The semiconductor nanowires (NWs), with unique optical, electrical and magnetic features, have been intensively characterized and used in nanoelectronics and nanophotonics applications
We investigated the morphology, crystal structure and ferromagnetism of the ZnO@Co/Ni hybrid core@shell NWs prepared by a facile electrochemical deposition method
The results show that a thin layer of Ni and Co has been coated on the surface of ZnO NWs, resulting in the improvement of ferromagnetic property in the hybrid core@shell NWs
Summary
The semiconductor nanowires (NWs), with unique optical, electrical and magnetic features, have been intensively characterized and used in nanoelectronics and nanophotonics applications. ZnO is a semiconductor material with a wide direct band gap of 3.37 eV, high electron mobility, large piezoelectric coefficient, and a large exciton binding energy of 60 meV at room temperature compared to other wide direct band gap materials, e.g. GaN (26 meV) or ZnSe (20 meV).[1] Many different methods can be used to synthesize ZnO NWs, in which, the wet chemical techniques at low temperatures are much more commonly used due to its simplicity, low cost and environmentally friendly These synthetic methods comprise of chemical bath deposition (CBD),[2,3,4,5] hydrothermal method,[6,7,8] and electrochemical deposition method.[9,10,11,12,13] In particular, electrochemical synthesis strategy is a novel promising technique for fabrication of new heterostructures. Both Co and Ni have very good electrical conductivity, which is capable of good ohmic contact behavior with ZnO NWs, and suitable for many applications such as eld emission transistors
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